2SA1387 transistor equivalent, power transistor.
*Designed for high current switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
.
*High DC Current Gain-
: hFE= 150(Min.) @ IC= -1A
*High Switching Speed
*Low Collector Saturation Voltage-
: VCE(sat)= -0.4V(Max)@ IC= -3A
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATION.
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